We propose a continuation of our experimental and numerical studies of 2-terminal InP transferred electron devices (TED) into the regime where the devices have lengths less than 1.0 micron. Experimentally, we will measure the: 1) pulsed and cw pre and post-threshold current-voltage characteristics; 2) oscillatory response at frequencies between 100 and 150 Ghz; 3) amplification behavior at these frequencies; 4) temperature, bias and circuit dependence of these phenomena. Numerically, we will simulate the data via a direct solution of the Boltzmann transport equation. The research will impact the areas of hot electron injection, high frequency microwave devices, metal semiconductor contacts, and transport in sub-micron structures.
