X-ray lithography will play a significant role in the production of the next generation of high-density electronic devices, in particular, in the production of computer memories. Mask technology has progressed considerably, but the problem of a source still remains. A clear trend has emerged worldwide in favor of the application of Electron Storage Rings as dedicated XRL sources, because of the sheer X-ray power of these machines. Much work still needs to be done before a successful Synchrotron XRL exposure process is developed. These include: the behavior of masks in the high-power X-ray beam; detailed studies of the local distortions; multi-level alignment with a successful test vehicle; the influences of external factors on the process; and a complete model describing the exposure tool, from the Synchrotron source to the development. The proposed research addresses the points where this work may make a unique contribution; this is in the area of exposure process characterization, real-time mask distortion studies, multi-level alignment techniques and process modelling. All of this will be applied to the unifying goal of demonstrating a multi-level test vehicle at linewidths of 0.25 um.
