This is a study of superlattice device behavior using a supercomputer. A New set of semiconductor equations which was proposed by the author will be used to investigate the effects of velocity overshoot, finite intracollision duration, boundary conditions, tunneling, energy quantization and hot electrons on the current transport in these devices. The high electron mobility transistor (HEMT) will be analyzed first and the results will be compared with those of other devices such as HBT's, THETA's, devices with different composition of A1, and devices using different materials other than GaAs.
