This proposal was submitted in response to the ECSE announcement of Grant Opportunities for Engineering Research in Japan. The first year of research is to be performed in Japan at Kyoto University and the second, at the University of Miami. Studies will be conducted on thin films for GaAs integrated circuit technology using the ionized Cluster Beam (ICB) deposition method. ICB research was initiated by researchers at Kyoto University and is based upon producing, ionizing, and accelerating atom clusters onto a substrate in a high vacuum environment. The objectives of the proposed research are to evaluate the claims about ICB, to obtain a first hand working knowledge of the technique, to develop ICB epitaxial GaAs films on specially prepared Si substrates and to develop single crystal interconnect films for GaAs technology. Additional objectives are to establish long term cooperation with Japanese researchers and establish ICB research at the University of Miami.

Agency
National Science Foundation (NSF)
Institute
Division of Electrical, Communications and Cyber Systems (ECCS)
Application #
8615814
Program Officer
Lawrence S. Goldberg
Project Start
Project End
Budget Start
1986-12-15
Budget End
1990-07-31
Support Year
Fiscal Year
1986
Total Cost
$152,308
Indirect Cost
Name
University of Miami
Department
Type
DUNS #
City
Coral Gables
State
FL
Country
United States
Zip Code
33146