Electrical measurements as a function of applied uniaxial stress will be made on GaAs/A1GaAs structures. Three areas will be covered: 1) Tunneling measurements. Fowler-Nordheim tunneling, single barrier direct tunneling and double barrier resonant tunneling will be studied to determine the position in crystal momentum space of the electronic states in the barrier which govern the tunneling processes. 2) DX centers. Kinetic trapping and transport measurements will be made to determine the position in crystal momentum space of the DX center and associated energy bands. 3) Pseudomorphic structures. Transport measurements will be made on lattice matched systems to simulate pseudomorphic structures to elucidate and optimize these properties.
