This project proposes to investigate the physics of rapid thermal processing of GeSi systems and their oxidation mechanisms. Epitaxial regrowth conditions and the resulting junction properties will be investigated. Thermal oxidation and the annealing kinetics to reduce interface states will be examined. Device structures based on these materials will also be studied. These include HJBT for very fast digital and high frequency analog applications, and heterojunction MOSFET's for fast and reliable digital applications. The focus will be on their fabrication and optimization. Device simulators will be employed to explore the device physics involved. This proposed research can potentially lead to new method in achieving high speed VLSI circuits.
