Picosecond time resolved photoluminescence experiments may be used to probe GaAs/Si interface quality and to study the effects of the built- in strain in GaAs and related structures on various material properties and carrier and phonon dynamic processes which are crucial to the operation of high speed devices. So far, no relevant picosecond studies have been reported. The PI proposes a research plan to investigate the quality of GaAs and carrier dynamics in GaAs quantum well structures grown on Si by time resolved photoluminescence measurements.
