Substitutional dopants in silicon diffuse via interactions with point defects (interstitials and vacancies). Simulators which model the fabrication of two dimensional integrated circuit structures and explicitly consider point defects have recently been developed (i.e., SUPREM IV), but in order for them to accurately predict device structures, a great deal of work remains in developing and quantifying models. The goal of this work is to develop basic quantitative physical models of substitutional dopant diffusion and precipitation/clustering for such simulators which can consistently predict the redistribution of dopants over the full range of fabrication conditions: in lightly and heavily doped materials, enhanced and retarded diffusion under conditions of point defect injection and extraction. We will analyze existing experimental observations of dopant diffusion under equilibrium and non-equilibrium conditions and also conduct new experiments to produce models which can be incorporated into future fabrication simulators.
