The objective of this research is to design, fabricate and characterize highly resonant electron wave guide structures. The semiconductor structures will be fabricated using high mobility GaAs/A1GaAs heterostructures. Device design will be similar to that of HEMT devices except a gate structure will confirm the two-dimensional electron gas between the source and the drain to one-dimension. The region of confinement will be shaped in a manner analogous to adding tuning stubs and cavities to a conventional wave guide system. We will examine the transmission coefficients and transconductance of the device as a function of gate bias, source-drain bias, temperature and applied magnetic field.
