Under an NSF Grant we have developed some of the essential elements of an x-ray lithography technology for replicating sum- 100nm features (so called x-ray nanolithography), including: durable mask membranes; means of patterning with e-beam and focused-ion beam systems; gap control via studs and piezoelectric drives; and a first- stage alignment system. In addition, we demonstrated that Auger and photoelectrons are not a limiting factor in nanolithography. As a result of this work, x-ray nanolithography has been used in the fabrication of a number of novel quantum-effect devices and structures, and is now considered a key enabling technology for future nanoelectronics. Renewal of this grant will enable to further perfect the alignment system, making it capable of sub-100nm alignment; improve the methods of making nanolithography masks, including better e- beam techniques and diamond membranes; study in detail the problem of diffraction from x-ray absorber patterns, including the effect of phase shifts; study the feasibility of non- damaging contact. The result of this research should be a reliable means of replicating complex, large-area patterns having features approaching 10nm.
