The primary of the proposed research is to develop the materials, processing, and device technologies necessary for the realization of GexSi1-x/Si optoelectronic devices and integrated circuits. Previous work in this area has relied almost entirely on III-V compound materials such as GaAs and InP. Recent improvements in the synthesis of GexSi1-x epitaxial layers (both single layers and superlattice structures) on Si substrates, however, have resulted in a viable and attractive Si-based alternative. In addition, initial research indicates that superlattice effects such as the Quantum Confined Stark Effect and Wannier-Stark Localization are present in GexSi1-x superlattice structures. As a result, it will be possible, for the first time, to fabricate active waveguide modulators and switches on Si substrates. This program will take advantage of standard Si integrated circuit technology with its benefits of low cost, high yield, and proven reliability. The program will have two thrust areas: (1) materials synthesis and characterization and (2) design, fabrication, and characterization of GexSi1-x devices.
