Funding is provided to: (1) Upgrade an existing molecular beam epitaxy (MBE) system by adding two new furnaces and an in-situ cleaver which will allow regrowth on the cleaved edge of GaAs/A1GaAs heterostructure thin films. (2) Add a pattern generator to an existing electron microscope so that we can do electron-beam lithography. These upgrades will enhance our capability to fabricate GaAs/A1GaAs structures and devices with novel electrical and optical properties.
