In this program various devices based on the AlGaSb material system for optical source and detector applications will be studied. Various (Al,Ga)Sb based on photodetectors structures including MSM (metal-semiconductor-metal), PIN, SAGM (Separate absorption graded and multiplication), etc., will be fabricated and characterized. In this area preliminary results have been very encouraging. Record breakdown voltages (6V) for molecular beam epitaxial (MBE) grown PIN diodes without surface passivation have already been obtained, and it is expected that significant progress will be made by pursuing a more comprehensive program. In addition to detectors, GaSb/AlSb quantum well optical modulators and quantum well lasers will be studied along with the integration of PIN and MSM detectors with the n- and p-channel FETs based on AlSb/InAs/GaSb. The optimal MBE conditions for the material growth will be established through reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy. The structural properties of the materials will be characterized by x-ray diffraction. The electrical and optical properties will be characterized Hall measurements and photoluminescence. Finally, GaSb MSM, PIN, avalanche and SAGM photodetectors will be fabricated and characterized.

Agency
National Science Foundation (NSF)
Institute
Division of Electrical, Communications and Cyber Systems (ECCS)
Application #
9113563
Program Officer
Athena C. Harvey
Project Start
Project End
Budget Start
1991-08-15
Budget End
1994-07-31
Support Year
Fiscal Year
1991
Total Cost
$255,000
Indirect Cost
Name
Columbia University
Department
Type
DUNS #
City
New York
State
NY
Country
United States
Zip Code
10027