This project will investigate and develop optoelectronic logic devices that operate in the visible spectrum. These devices will be fabricated from combinations of InGaP, InGaAlP and GaAs; materials that have not previously been used for optoelectronic logic applications. The device structures will be fabricate from epitaxial layers grown by gas source molecular beam epitaxy. The primary objective of this project is to determine if the above materials are suitable for the development of visible spectrum optoelectronic devices since there are presently no reported optical logic gates that operate in this wavelength range. The potential impact of the development of visible spectrum optical logic devices fabricated from the InGaP/InGaAlP/GaAs material system is great. Not only could it open up new research in the area of visible spectrum optoelectronic devices, which will provide smaller, more sensitive pixels, but these materials are also a possible replacement for heterojunction bipolar transistor and the p channel MODFET which are presently fabricated from AlGaAs/GaAs.
