9310613 Lu In this proposal we present a research program that aims at answering the challenge of ULSI metalizations by adopting a new approach to applying metallization using a very practical technology. We propose to investigate the epitaxial metal contacts to GaAs and InP, formed using partially ionized beam deposition technique. This technique offers surface self-cleaning, low temperature epitaxial deposition, excellent control on composition of the alloys to be deposited, and all of this in a non UHV deposition chamber. The metallizations to be investigated are epitaxial films of Al, CoSi2, Co2P, Ge2Co, and A12Pt. These metal and alloy films are carefully selected to satisfy our needs of stable metallization with the best chance to form them epitaxially on GaAs and InP. The deposition, characterization including process stability, and applicability will be determined. The most promising scheme will then be used to fabricate a MESFET on GaAs and/or InP. ***
