9322083 Vanasupa Recent technological developments in microelectronic processing demonstrate that electrolessly deposited copper(Cu) is a viable replacement for aluminum (A1) alloys as an interconnect material for large scale and ultra-large scale integrated circuits. Most of the studies concerning this material have focused on the resulting electrical properties of electrolessly deposited Cu films. This project uses atomic force microscopy to study the physical deposition mechanisms (nucleation and growth) of the films in situ. Scanning tunneling microscopy and grazing incidence x-ray diffraction will provide additional crystallographic information. The electrical performance of the films will also be evaluated. Through this study we will gain insight into the relationship between the deposition conditions and the resulting microstructure and properties. A greater understanding of the physical deposition mechanism of the electrolessly deposited Cu will allow better control of the deposition process and the film properties. ***
