9530984 Garfunkel The program addresses the study of ultra-thin (<10 nm) oxides on silicon substrates. The investigation centers around a cross-correlation between growth mechanisms, composition, microstructure and electrical properties of the thin oxides. Medium Energy Ion Scattering (MEIS) will be employed together with a number of analytical and electrical techniques to provide a characterization of the transition region between the oxide and the underlying silicon substrate. ***
