Celik-Bulter The Semiconducting Research Corporation (SRC) has identified noise modeling of sub-micron Metal Oxide-Semiconductor Field-Effect Transistors (MOSFETs) as one of most urgent short term research needs for 1997-98. As devices shrink, frequencies increase, and voltages reduce, the need to understand the noise sources in new generation MOSFETs becomes more and more important in order to design and gavricate devices with acceptable performance characteristics. Noise models developed for large area devices based on the large-number-the device, beyond a certain limit of scaling down, with existing models, it becomes impossible to predict the noise performance of an individual transistor, specifically a MOSFET. The lack of accurate models leads the process and to significant waste of valuable time. There is a need to measure and understand the sources of noise(all kinds and wide frequency range) exhibited by deep-submicron MOSFETs. ***
