In this proposal a plasma chemical vapor deposition diamond growth system will be developed. It will consist in general of a microwave source, Astex plasma chamber, high vacuum system, and various hydrocarbon gases. Once the growth system has been developed, the deposition of thin film diamond onto various substrates will be carried out. This will involve the optimization of several growth parameters such as; gas flow rate, vacuum system pressure position of the substrate with respect to the plasma, time, energy density, types of hydrocarbon gases, and gas ratio to insure single crystal diamond growth. To determine the characteristics of the thin film depositions a variety of materials and related measurements will be performed.