Recently, bright luminescence was reported in GaN films with high crystalline defect densities. This result is puzzling since crystalline defects usually quench luminescence. That defects can exist in light emitting devices without severe degradation of the light output is very unusual and merits further study. Dr. Palmer will carefully examine the relationship between crystalline defects and optical properties in GaN. Samples will be grown by MOVPE at NTT Optoelectronics Laboratories by Dr. T. Matsuoka, and characterized (TEM, X-ray for crystal quality; PL for optical properties, C-V and Hall effect for electrical properties; DLTS for non-radiative defects) by Dr. Palmer working with graduate and undergraduate students. As part of this research, a graduate student will be sent to Japan to: visit Dr. Matsuoka's laboratory and learn more about the growth of III-V nitides, visit other Japanese laboratories actively involved in III-V nitide research, and attend and present results at an international conference to be held in Japan. Interactive activities include: organizing a seminar in which prominent women in engineering and the physical sciences speak about their work; teaching a challenging (required) upper division undergraduate course, "Introduction to Semiconductor Devices" during the spring term; and sponsoring an undergraduate woman research intern through the host institution's Women in Engineering Program (WEP).
