This award will support Professor Pierre Schmidt of Florida International University in a research collaboration with Professor A. Ortiz-Conde of the Universidad Simon Bolivar in Caracas, Venezuela. The objective of the collaboration is the development of a circuit model for thin film silicon- on-insulator MOSFETs based upon the charge-sheet concept. The project will include checking the range of validity of the models, development of a computer aided design model, and calculation of static current-voltage characteristics. The technology involved in this project is of importance to radiation-tolerant integrated circuits, to novel three- dimensional integrated circuits, to high-voltage transistors, and to advanced device and circuits concepts all based on thin-film silicon-on-insulator MOSFETs. A considerable part of the analytical study will be carried out by the Venezuelan side, while experimental verification and determination of the range of validity will be done by the U.S. side.
