Under this award Professor George Collins of the Department of Electrical Engineering, Colorado State University (CSU), will spend twelve months in Japan, commencing in May 1991, at the Research Laboratory of Engineering Materials, Tokyo Institute of Technology (TIT), where he will work with Professor Hideomi Koinuma on developing information relevant to the epitaxial growth of compound semiconductor films at reduced temperature. The research will employ a near afterglow H2 plasma source developed at Colorado State University, which will be placed in an existing Tokyo University OMCVD reactor to achieve epitaxial films of GaAs on ZnSe and Si, while the ZnSe will be deposited on GaAs. The feedstock precursors will be limited to only organ metallic gases of methyl and ethyl compounds. Near afterglow OMVD has hither to been largely unexplored despite its capability to provide a lower deposition temperature; in-situ H2 plasma cleaning of substrate prior to growth; in-situ hydride and hydride radical (e.g. AsH2, AsH, etc.) generation; and lower residual carbon both at interfaces and in bulk films. The role of the hydrogen will be delineated for both gas phase OMCVD reactions, formation of AsHx radicals, as well as carbon gasification reactions via mass spectroscopic deuterium isotope tracer studies. All gas phase studies will be correlated to deposited film properties material characterization at Tokyo University will emphasize: photoluminescence, double crystal x- ray diffraction and SIMS.
