This award supports a two-year collaborative research project betweeen Professor Steven M. George of the University of Colorado and Professor Masataka Hirose of Hiroshima University, Hiroshima, Japan. The research involves the study of reaction kinetics on semiconductor surfaces to develop silicon atomic layer processing. Professor Hirose focuses on the physics and chemistry in ultra large scale integration (ULSI) process technology. The atomic layer control of silicon processing is a critical need for ULSI device fabrication. The control of monolayer processing requires an understanding of surface kinetics. This collaborative project will bring together the background and expertise of the two research groups in surface kinetics and device fabrication. The project also mixes the disciplines of chemistry and electrical engineering. The PI will visit Professor Hirose's laboratory twice, each time taking a graduate student with him for an extended period. Professor Hirose and his colleagues will also visit the University of Colorado.
