This Small Business Innovation Research (SBIR) Phase I Project will prove that laser annealing can crystallize thin films of SrBi2Ta2O9 (SBT) to a device ready quality, while keeping the substrate temperature at a level compatible with CMOS components. SBT films are strong candidates for use in non-volatile ferroelectric memory applications (FeRAM), due to their "fatigue-free" read/write performance and low voltage operation. However, SBT films typically require a post deposition-annealing step (> 700 C in oxygen) to crystallize the films and achieve optimum performance. This high temperature-annealing step is incompatible with current IC fabrication schemes, particularly designs that use tungsten for the first level contacts. This laser-annealing tool will prevent thermal damage to the underlying CMOS structures, and enable SBT film acceptance in FeRAM device applications. The project will show proof of concept by annealing films and demonstrating device performance. Ferroelectrics are poised to rapidly expand into the several billion-dollar non-volatile memory markets. This tool will accelerate this market penetration and thereby become a key component of a multiple hundreds of million dollars per year tool market.
