Boron nitride nanotubes (BNNTs) are structurally similar to carbon nanotubes (CNTs) with many similar properties such as extraordinarily high mechanical strength and thermal conductivity. Unlike CNTs, BNNTs have a uniform band gap (~5.5 eV) that is not sensitive to structural variations. Furthermore BNNTs are chemically more inert than CNTs, and have a higher resistance to oxidation at high temperatures. However, there are few research groups in the world capable of producing high-quality BNNTs. Based on their unique capability in growing high-quality BNNTs researchers will investigate a scanning chemical vapor deposition (SCVD) technique. Preliminary tests of the small SCVD system have demonstrated a 10-fold higher production yield of BNNTs. The yield could potentially be further improved by 1000-fold with the use of a bigger CVD system.

If successfully completed, this project may further the use of BNNTs in various branches of science and engineering, including 1) insulating heat sink materials for high-performance electronic devices and engines, 2) doped BNNTs for nanoelectronic and photonic devices without the need of post-synthesis sorting, 3) chemically inert and high performance ceramics/alloys/composites, 4) boron neutron capture therapy (BNCT) for cancer treatment, 5) drug delivery using BNNTs.

Project Report

Boron nitride nanotubes (BNNTs) are structurally similar to carbon nanotubes (CNTs). Both BNNTs and CNTs have extraordinarily high mechanical strength and high thermal conductivity. On the other hand, BNNTs are of advantageous to CNTs with a uniform band gap (~6 eV) that is not sensitive to structural variation of the nanotubes. Furthermore BNNTs are chemically more inert than CNTs, and have a higher resistance to oxidation at high temperatures. Unfortunately, due to the production challenges, there are few research groups in the world capable of producing high-quality BNNTs. Based on our unique capability to grow high-quality BNNTs developed under a NSF CAREER award (Award #0447555), we have investigated a new chemical vapor deposition (CVD) technique for high yield synthesis. The team has also received entrepreneurial training and developed a business plan for our BNNT technologies. The intellectual merits and broader impacts of the project are summarized as follows, Intellectual Merits 1) Our prototype CVD system has demonstrated a possible daily yield of BNNTs 100-fold higher than a conventional CVD technique. This new technique is scalable and viable for mass production. 2) Our success has made high-quality BNNTs commercially available to researchers for future investigation in various branches of science and engineering. Our success will lead to breakthroughs in multiple commercial areas including 3) electrically insulating heat sink materials for high-performance electronic devices and engines, 4) boron neutron capture therapy (BNCT) for cancer treatment, 5) drug delivery using BNNTs. In particular, participation in the I-Corps program has allowed for the identification of BNNTs as being uniquely suited for solving the many heat related problems facing the high power electronics industry. Broader Impacts 1) We have created a new company, Nano Innovations, LLC (www.nano-innov.com) and started to create new jobs. 2) We have successfully identified a viable commercialization path for BNNTs, which has led to the award of a Small Business Technology Transfer (STTR) Phase-I project (NSF award 1331975) for the development of BNNT composites. 3) Within the first 6-month of our STTR project, Nano Innovations has started to convert the basic research, that was initiated by a NSF CAREER award, into commercial products (see www.nano-innov.com/contact-us.html), 4) We have started to inspire undergraduate and graduate students to create new technologies and identify their market potential via a new course module, 5) Pending on future SBIR/STTR support, we will continue to expand into new markets, including those in the biomedical area, which will allow for further job creation trough company expansion.

Agency
National Science Foundation (NSF)
Institute
Division of Industrial Innovation and Partnerships (IIP)
Type
Standard Grant (Standard)
Application #
1265116
Program Officer
Rathindra DasGupta
Project Start
Project End
Budget Start
2012-10-01
Budget End
2013-09-30
Support Year
Fiscal Year
2012
Total Cost
$50,000
Indirect Cost
Name
Michigan Technological University
Department
Type
DUNS #
City
Houghton
State
MI
Country
United States
Zip Code
49931