This Small Business Innovation Research (SBIR) Phase I project addresses the development of a novel technique for improving the efficiency of ultraviolet (UV) light emitting devices (LEDs). The UV LED fabrication process typically includes deposition of thin semiconductor films onto substrates that can be fabricated into devices. Traditionally, during the deposition process impurities are added to the semiconductor films to obtain the desired electrical properties. The introduction of the impurities, however, produces defects in the semiconductor materials that can limit the efficiency of the devices. The technique proposed in this project will modify the deposition process of the semiconductor films in order to obtain the desired electrical properties without the use of intentional impurities. This has the potential of producing much more efficient light emitters. The proposed technique has the added advantage of producing material whose electrical properties are less sensitive to temperature, which can prove useful for many applications. The composition of the semiconductor materials investigated in this project can be modified to produce LEDs capable of emitting light from the ultraviolet to visible range. A successful project will lead to an enabling technology for development of novel, high efficiency LEDs.
The broader impacts/commercial potential of this project addresses the development of efficient light emitting semiconductor devices. Fundamental physical properties studied in this effort will enhance scientific and technological understanding of the nature of semiconductors. These advances may yield a new paradigm for functionalizing semiconductor materials for more efficient and higher performance optical and electronic devices. Possible applications for this technological advance include general room lighting, traffic lights, outdoor displays, automotive applications, water treatment, sterilization, and ultrahigh density optical storage systems. Moreover, the technique proposed in this work may lead to improvement in the performance of other microelectronic devices such as transistors, laser diodes, modulators and photodetectors. The proposed devices will enable unique high power and extreme temperature operation as the approach does not face the same limitations as currently used technology. Significant commercialization potential exists for the proposed technology on the basis of superior performing devices in the aforementioned categories.
The goal of our NSF SBIR project is the development of transistor switches for 600-700V+ applications fabricated from gallium nitride (GaN) based materials. To achieve this goal Agnitron Technology proposed and demonstrated the use of a novel and innovative technique for creating material with the required electrical properties. Typically, in order to obtain material with the desired electrical (conduction) characteristics it is necessary to add impurities, which can have deleterious effects on material quality and, in turn, device performance. By avoiding the use of impurities Agnitron Technology expects to develop significantly improved transistors that will have numerous applications including power switches. The growing market size for GaN-based power switches is projected to grow to nearly 2 billion dollars annually by the year 2020 and offers Agnitron a significant commercial opportunity to leverage the technology demonstrated in Phase I of this project. High-voltage GaN power device research has gained momentum in recent years due to the superior material properties of GaN over Silicon which has dominated this market for decades. Several critical advancements make its application prospect increasingly realistic, including the progress in growth templates for GaN material growth (used for transistor fabrication) and the development of new designs. However, several technology gaps remain such as higher voltage operation and improved reliability. With additional development the transistors made from GaN promise transformative advances in power electronics systems in terms of increased energy efficiency and overall systems miniaturization compared to the conventional silicon-based power electronics systems. Power electronics are projected to play a significant and growing role in the delivery of this electricity. It has been estimated that as much as 80% of electricity could pass through power electronics between generation and consumption by 2030 as compared to 30% of the electrical energy that passes through power electronics converters today. The use of GaN (and related materials) allow power electronic components to be smaller, faster, more reliable, and more efficient than their silicon (Si)-based counterparts. These capabilities make it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications. Harnessing these capabilities can lead to dramatic energy savings in industrial processing and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and help integrate renewable energy onto the electric grid. The diverse combination of talents and experience within our team has prepared Agnitron to continue on to a successful Phase II program. Moreover, we shall use our relationships with outside collaborators to gather advice and guidance throughout the Phase II program. Agnitron plans to publish results obtained during the Phase I project in trade journals in the near future.
