The potential for further development of hexagonal boron nitride (hBN) single crystals will be explored. Single crystals of hBN are potentially transformative materials because of their unique properties and applications as a graphene substrate, a neutron detector, and as UV-LED semiconductors. Some of the unique properties of hBN include its ability to emit deep-UV light (as low as 215 nm), its large thermal neutron capture cross section (due to the strong interaction between thermal neutrons (~25 meV) and the 20% naturally occurring boron-10 isotope), and a crystal structure that is similar to graphene (including the smallest known lattice mismatch of only +1.7%), making it an excellent substrate for graphene. However, electronic and optoelectronic device applications exploiting these properties have been hampered by the small size, poor crystal quality, and high impurity content commercially available hBN.
The hBN single crystals produced in this project could enable the development of new types of devices exploiting its properties including deep-UV emitters (for non-thermal sterilization and water purification), solid state neutron detectors (for homeland security, first responders, and treaty verification), and as an excellent electrically insulating substrate for grapheme integrated electronics and sensors. This project will explore the widespread use and practical application opportunities afforded by these hBN single crystals with the goal of manufacturing the crystals on a large scale.
The wide bandgap semiconductor hexagonal boron nitride (hBN) is potentially useful in novel electronic and optoelectronic devices including high frequency graphene transistors, neutron detectors, and ultraviolet light emitters. This I-Corp grant was used to determine if sufficient demand for hBN single crystals exists or could be developed to sustain a business selling this material. Over one hundred potential end users and market experts in all three markets were interviewed, to establish the required physical and chemical properties and the cost customers were willing to pay. Researchers from academia and federal laboratories expressed great interest hBN single crystals, but industrial representatives were primarily interested in functioning devices or even systems incorporating the devices. However, devices incorporating hBN are just beginning to be fabricated and tested; their potential superiority is as yet largely unproven. Thus, we concluded that the revenue stream from a market composed of just researchers was currently too small to warrant the formation of a company. Therefore, we plan to further refine and improve the hBN crystal growth process to increase the crystal size and to increase the process efficiency. We will continue to collaborate with researchers interested in incorporating hBN into their devices. These steps will help to establish the necessary technical foundation needed for commercializing hBN single crystals. Technical merit: the hBN crystal growth process was further developed. Broader Impacts: The project’s P.I. and postdoc experienced first-hand the fundamental aspects of business and marketing.
