A new technique for depositing refractory metal coating in ceramics or semiconductors is suggested. The process is based upon liquid precursor which could be coated on semiconductor wafers using the same techniques which are currently used for liquid resist coatings. After baking, the liquid precursor is reduced to a refractory metal coating in hydrogen. Unlike metallization techniques which involve sputtering or CVD, the process takes place entirely at atmospheric pressure, potentially reducing the complexity and cost of metallization. Also, larger, complex surfaces can be coated potentially more easily than is possible by vacuum processes.
