In the next decade indium phosphide based lasers are expected to be critically important in integrated electrooptic devices and fiber optics communication due to their high speed and bandgap in the near infrared spectral region. Semi-insulating titanium doped indium phosphide is required for fabrication of high speed, high power, low threshold, long lasting lasers with low leakage currents. This material cannot currently be fabricated by MOCVD, which is a preferred method of manufacture, due to the low volatility and instability of the available titanium source reagents. In Phase I five new titanium source reagents specifically engineered for high volatility will be synthesized and tested as InP dopants.
