This research program is directed toward the characterization of non-idealities in various types of integrated circuit capacitors for the applications in high precision switched capacitor circuits. A simple integrated circuit containing only three capacitors and external control circuitry precisely measures such non-idealities as the ratio mismatch between capacitor values, voltage coefficient, and charge-voltage hysteresia. Test-integrated circuits with various types of capacitors available in NMOS and CMOS processes will be fabricated and non-idealities will be measured. Figure of merit for each capacitor type will be determined based upon the measurement for high precision integrated circuits. Circuit techniques to reduce the effect of non-idealities will also be studied.