A 1986 Memorandum of Understanding (MOU) between the National Science Foundation (NSF) and the Defense Advanced Research Projects Agency (DARPA) established a three-year joint program supporting VLSI (Very Large Scale Integration fabrication by MOSIS (Metal Oxide Semiconductor Implementation Service) for qualifying universities. This is a three-year continuation to that agreement, commencing October 1, 1989. This continuation of the MOU expands the original program to accelerate critical capabilities for Microsystems Design and Prototyping in U.S. universities. This includes expanding the original services and technologies available to universities authorized to use MOSIS as they become generally available (e.g. semi-custom and gallium arsenide chip fabrication); stressing VLSI education, especially undergraduate education needed for designing future electronic systems; exploring new fabrication services designed specifically for the research and education community's desire for cost effective experimentation of state-of-the-art technologies (e.g. design of advanced sensor and micromechanical devices); and rapid prototyping methodologies, tools and services needed for complete systems. The program has been widely acclaimed by both universities and industry as essential to the U.S. research and education effort, and important in the national effort to improve U.S. competitiveness. As of June 1, 1990, over one hundred forty (140) universities are authorized to use MOSIS for VLSI educational purposes and over 5500 students are enrolled in university VLSI Design classes. This has provided a valuable cost effective educational tool for teaching VLSI, as well as resulted in a sound human resource base that has significantly contributed to important research successes supported by both the NSF and DoD.
