It is proposed to hold the 42nd annual Gaseous Electronics Conference in Palo Alto, California October 17-20, 1989. The Conference will provide a forum for exchange of information on the basic physics and chemistry of ionized gases and of macroscopic discharge phenomena, dealing with basic collisional, radiative and plasma processes. Emphasis is given to the underlying processes that occur in electric discharges, arcs, gas lasers, and weakly ionized plasma. A substantial part of the program will be devoted to electron collisional processes, especially electron impact excitation and ionization of atoms and molecules in selected ground and excited states. A second area is the characterization of the fundamental processes important in plasma processing reactors for semiconductor manufacturing. Sessions are planned on (1) plasma chemistry and processing, (2) heavy particle and excited state collisions, (3) the use of plasmas for measuring fundamental data, (4) the argon/Xenon laser, and (5) electron impact ionization.
