9625796 Clarke This project is to examine the small scale electronic interconnect damage processes of electromigration voiding and interfacial decohesion which affect the reliability of integrated electronics. These are highly localized phenomena which are affected by temperature (from Joule heating) and stresses. The length scales are much smaller than those of standard mechanics experiments and therefore new experimental techniques are required. The proposed measurements are based on the shift and broadening of both the Raman lines of silicon and the R-line fluorescence of sapphire as a function of temperature and stress. By exciting the spectra with a finely focussed laser the local temperature and stress can be measured. A novel micromechanics test will also be used to measure fracture resistance of interfaces. ***
