This project plans to conduct fundamental research on the molecular design of novel and highly sensitive inorganic/organometallic photoinitiators, elucidation of the mechanism of initiation, and evaluation of new radiation-sensitive materials for photolithographic applications in microelelectronics. The scope of research includes new classes of photoresponsive materials possessing improved thermal stability, photosensitivity, and wavelength response. %%% Knowledge gained from these studies will aid in the design of new generation photosensitive materials required to satisfy the increasingly demanding needs of the microelectronics, coatings, and reprographic industries.

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9122653
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1992-06-15
Budget End
1995-11-30
Support Year
Fiscal Year
1991
Total Cost
$302,900
Indirect Cost
Name
University of Georgia
Department
Type
DUNS #
City
Athens
State
GA
Country
United States
Zip Code
30602