9414209 Pollak Fundamental research directed toward improved understanding of growth and processing of semiconductors, and the electronic properties of heterostructures through the development and use of advanced modulation spectroscopy, particularly photore flectance and electrore flectance, for an effective screening tool in the characterization of semiconductor device structures will be conducted. The research base established will serve to improve materials parameters such as alloy composition, Schottky barrier heights, interfacial quality, and well width in quantum well structures and superlattices. %%% This research is expected to provide deeper fundamental understanding of semiconductor growth and processing, and the fundamental electronic properties of heterostructures. A major advantage of the methods being developed is that they can be used in situ and in real time for effective improvement in the control of advanced semiconductor growth and subsequent processing as well as providing fundamental information on the basic electronic properties of these materials. ***

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9414209
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1995-02-01
Budget End
1999-07-31
Support Year
Fiscal Year
1994
Total Cost
$230,000
Indirect Cost
Name
CUNY Brooklyn College
Department
Type
DUNS #
City
Brooklyn
State
NY
Country
United States
Zip Code
11210