For optical emitters, the vertical-cavity surface- emitting laser has recently attracted much attention because of such considerations. The vertical-cavity structure may represent a geometry which allows for the ultimate miniaturization of the semiconductor laser. Analogous to the quantum size effects which influence charge carriers in semiconductors, the small optical cavity of the vertical-cavity laser (on the order of the optical wavelength) can be expected to influence the cavity confined photon emitted by the semiconductor. In this proposed research program, these cavity confined photon-semiconductor interactions will be experimentally investigated, with an emphasis on gleaning knowledge useful both for practical device design and also a more fundamental understanding of the semiconductor light emission process in micro-cavity structures. The cavity structures will be realized using molecular beam epitaxy to fabricate highly reflecting A1As/GaAs Bragg mirrors for Fabry-Perot cavities. High contrast dielectric mirrors deposited using electronbeam evaporation will also be studied. Characterization will focus on measuring the degree of cavity enhanced or inhibited spontaneous emission with various microcavity designs. Results of the studies will be used to fabricate improved microcavity (vertical- cavity) semiconductor lasers.
