9525993 Narayan Formation of low resistivity ohmic contacts that exhibit high thermal stability, and planar interfaces has represented a major impediment to III-V device technology. The primary thrust of this proposal is three-fold: (1) structure and intrinsic electrical properties of novel Cu-Ge alloys as a function of Ge concentration and ordering; (2) formation of low resistivity ohmic contacts and correlations with interface structure and chemical composition, substrate doping and anneal temperature; and (3) optimization of parameters to obtain low-resistivity ohmic contacts and fabrication of test device structures. We propose the formation of novel ohmic contacts with record low contact resistivity and high temperature stability based on Cu-Ge alloys to n- and p- type GaAs and related III-V compounds. The contact scheme will be developed and optimized to fabricate advanced semiconductor test devices which are expected to exhibit superior device properties and performance. ***
