The proposed program is to adapt the Heat Exchanger Method (HEM) for the growth of ZnTe crystals. The integrity of the silica ampoule can be maintained during HEM growth because there are no temperature gradients built into the heat zone and a support structure for the ampoule can be used with minimal interference for heat flow. It is intended to grow crystals under low superheat conditions and to control the temperature gradient in the solid by the heat exchanger. ZnTe has potential for applications involving green LEDs in optical displays, high density recording and optical communications.
